A 0.0016 mm² 0.64 nJ leakage-based CMOS temperature sensor

This paper presents a CMOS temperature sensor based on the thermal dependencies of the leakage currents targeting the 65 nm node. To compensate for the effect of process fluctuations, the proposed sensor realizes the ratio of two measures of the time it takes a capacitor to discharge through a trans...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2013-09, Vol.13 (9), p.12648-12662
Main Authors: Ituero, Pablo, López-Vallejo, Marisa, López-Barrio, Carlos
Format: Article
Language:English
Subjects:
Accuracy
CMOS
Design
Digitization
DTM (Dynamic Thermal Management)
Energy consumption
Equipment Design
Equipment Failure Analysis
leakage
Propagation
Random access memory
ratio-based
Reproducibility of Results
Semiconductors
Sensitivity and Specificity
Sensors
temperature sensor
Thermography - instrumentation
Transducers
Transistors
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Summary:This paper presents a CMOS temperature sensor based on the thermal dependencies of the leakage currents targeting the 65 nm node. To compensate for the effect of process fluctuations, the proposed sensor realizes the ratio of two measures of the time it takes a capacitor to discharge through a transistor in the subthreshold regime. Furthermore, a novel charging mechanism for the capacitor is proposed to further increase the robustness against fabrication variability. The sensor, including digitization and interfacing, occupies 0.0016 mm² and has an energy consumption of 47.7-633 pJ per sample. The resolution of the sensor is 0.28 °C, and the 3σ inaccuracy over the range 40-110 °C is 1.17 °C.
ISSN:1424-8220
1424-8220
DOI:10.3390/s130912648