SINGLE-CRYSTAL TUNGSTEN

A technique and the apparatus for growing large (1 m long) single crystals of W are described. A single-crystal W wire is placed in WCl6 vapor, which partially decomposes into its components above 1000 C. The factors which influence a regular growth are: (1) the temperature of the growing wire; (2)...

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Bibliographic Details
Main Author: VAN ARKEL, A E
Format: Report
Language:English
Subjects:
CHLORIDES
CRYSTAL STRUCTURE
CRYSTALLIZATION
DECOMPOSITION
DEPOSITS
GROWTH(PHYSIOLOGY)
PYROLYSIS
SINGLE CRYSTALS
TRANSLATIONS
TUNGSTEN
TUNGSTEN COMPOUNDS
VAPOR PLATING
VAPORS
WIRE
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Description
Summary:A technique and the apparatus for growing large (1 m long) single crystals of W are described. A single-crystal W wire is placed in WCl6 vapor, which partially decomposes into its components above 1000 C. The factors which influence a regular growth are: (1) the temperature of the growing wire; (2) the WCl6 pressure; (3) the pressure of the free Cl; and (4) the orientation of the crystal with respect to the wire. Singlecrystal W was much softer and more flexible than W prepared in the usual manner. An x-ray analysis showed that the single-crystal structure was destroyed by working, and with increasing deformation, the properties of the material approach those of ordinary tungsten.