DEVELOPMENT AND FABRICATION OF A 5 KMC ELECTROCHEMICAL SWITCHING TRANSISTOR

The report describes the theoretical and experimental investigations which were performed to fabricate a germanium transistor exhibiting an f sub t of 5 Kmc/sec. Standard electrochemical methods with some necessary modifications were employed to fabricate the transistors. The intrinsic f sub t of th...

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Bibliographic Details
Main Author: Schmechel, Donald M
Format: Report
Language:English
Subjects:
CONSTRUCTION
CONTAINERS
CRYSTAL GROWTH
Electrical and Electronic Equipment
ELECTROCHEMISTRY
ELECTRONIC SWITCHES
ETCHED CRYSTALS
GERMANIUM
SEMICONDUCTOR DEVICES
TRANSISTORS
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Summary:The report describes the theoretical and experimental investigations which were performed to fabricate a germanium transistor exhibiting an f sub t of 5 Kmc/sec. Standard electrochemical methods with some necessary modifications were employed to fabricate the transistors. The intrinsic f sub t of the fabricated transistor was determined to be 5 Kmc or greater but, due to an electrical interaction between the passive elements in the transistor and the TO-18 enclosure, useful measurement of this quantity could not be made. Recommendations are made for future work involving investigation of the influence of f sub t on switching speeds, more accurate definition of relationship between measured f sub t and device parameters, development of advanced transistor structures, and design and construction of a suitable enclosure for high speed devices. Subcontract to Lincoln Lab., Mass. Inst. of Tech.