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HIGH POWER SEMICONDUCTOR TR DEVICES
This is the final report on the development of high power Semiconductor K sub U Band Limiters and X sub L Band Switching Devices. The reports presents the program objectives, technical background, theoretical and experimental results and final characteristics of each device. The development effort i...
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Format: | Report |
Language: | English |
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Online Access: | Request full text |
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Summary: | This is the final report on the development of high power Semiconductor K sub U Band Limiters and X sub L Band Switching Devices. The reports presents the program objectives, technical background, theoretical and experimental results and final characteristics of each device. The development effort included both microwave circuit design and semiconductor engineering. Specific efforts were directed toward manufacturing limiter diodes applicable for use at K sub U band. Investigation included the use of packageless semiconductors as well as special miniature diode ceramic packages. Microwave circuits were designed and utilized in order to make full use of the semiconductor diodes characteristics. The results of the program in each area of investigation are discussed and experimental data is given. Final conclusions and recommendations for future engineering development to achieve improvements are presented as a result of the successful accomplishments on this contract. (Author)
See also AD-619 679. |
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