INVESTIGATION OF P-JUNCTIONS PRODUCED ON THE BASIS OF SILICON CARBIDE ALLOYED WITH BERYLLIUM

Electroluminescent p-n-junctions based on p-SiC(Be), prepared by various methods, are described. Volt-ampere, volt-capacitive, and spectral characteristics of the p-n-junctions are presented. Satisfactory rectifying properties were obtained from grown p-n-junctions in the plane perpendicular to axis...

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Bibliographic Details
Main Authors: Kalnin,A. A, Pasynkov,V. V, Tairoy,Yu. M, Yaskov,D. A
Format: Report
Language:English
Subjects:
BERYLLIUM
CRYSTAL GROWTH
DOPING
ELECTROLUMINESCENCE
LUMINESCENCE
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTORS
SILICON CARBIDES
Solid State Physics
TRANSLATIONS
USSR
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Summary:Electroluminescent p-n-junctions based on p-SiC(Be), prepared by various methods, are described. Volt-ampere, volt-capacitive, and spectral characteristics of the p-n-junctions are presented. Satisfactory rectifying properties were obtained from grown p-n-junctions in the plane perpendicular to axis c. (Author) Edited trans. of Fizika i Tekhnika Poluprovodnikov (USSR) v1 n4 p484-487 1967, by R. Wallace.