Development of (Hg,Cd)Te Elevated Temperature Photovoltaic Detectors

The report describes the results on the first phase of a development program to design and fabricate 5 micron (Hg,Cd)Te photodiodes for 170K operation. The technique of ion implantation has been used to produce photodiodes exhibiting (D star)Lambda) values of 3 x 10 to the 10th power cm (Hz to the 1...

Full description

Saved in:
Bibliographic Details
Main Author: McNally,Philip J
Format: Report
Language:English
Subjects:
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE CARRIERS
Electrical and Electronic Equipment
INDIUM
Infrared Detection and Detectors
INFRARED DETECTORS
ION BOMBARDMENT
ION IMPLANTATION
LIFE EXPECTANCY(SERVICE LIFE)
MANUFACTURING
MERCURY TELLURIDE
PHOTOCONDUCTIVITY
PHOTODIODES
PHOTOSENSITIVITY
PHOTOVOLTAIC CELLS
Solid State Physics
TELLURIDES
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The report describes the results on the first phase of a development program to design and fabricate 5 micron (Hg,Cd)Te photodiodes for 170K operation. The technique of ion implantation has been used to produce photodiodes exhibiting (D star)Lambda) values of 3 x 10 to the 10th power cm (Hz to the 1/2 power)/w at this temperature. The report describes the process and design considerations and predicted performance based on presently available material characteristics. Calculations show that in the 170K temperature range, the diode saturation current determines the achievable performance. Details of the characterization of the detectors and experimental areas for investigation in the second phase are discussed. (Author)