New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals

The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradien...

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Bibliographic Details
Main Authors: Wilcox, William R, Allred, Worth P, Crowell, Clarence R, Esquivel, Agerico, Gershenzon, Murray
Format: Report
Language:English
Subjects:
BRIDGEMAN GROWTH TECHNIQUE
CATHODOLUMINESCENCE
CRYSTAL GROWTH
Crystallography
CZOCHRALSKI METHOD
DISLOCATIONS
DOPING
ELECTRICAL PROPERTIES
EPITAXIAL GROWTH
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM NITRIDES
GRADIENT FREEZE TECHNIQUE
HALL EFFECT
IMPURITIES
MANUFACTURING
PHOTOLUMINESCENCE
PLASTIC DEFORMATION
POLISHES
SEMICONDUCTORS
Solid State Physics
TRAVELING HEATER METHOD
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Summary:The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradient freeze, and liquid epitaxy techniques for GaAs growth were developed and studied. The travelling heater method for GaAs and III-V alloys was studied. Material was characterized by spark-source mass spectrometry, ion microprobe mass analyzer, glow-discharge spectroscopy, infrared absorption, dislocation etching, X-ray topography, cathodoluminescence, photoluminescence, Hall measurements, photothreshold, and C-V-W measurements on Schottky barriers. Dislocations generated by bending were observed by cathodoluminescence and the effect on electrical properties determined. A new technique for measuring and controlling oxygen in gallium melts was developed and studied. Sponsored in part by Grant DAHC15-72-G7. See also AD0756259.