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New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals
The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradien...
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| creator | Wilcox, William R Allred, Worth P Crowell, Clarence R Esquivel, Agerico Gershenzon, Murray |
| description | The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradient freeze, and liquid epitaxy techniques for GaAs growth were developed and studied. The travelling heater method for GaAs and III-V alloys was studied. Material was characterized by spark-source mass spectrometry, ion microprobe mass analyzer, glow-discharge spectroscopy, infrared absorption, dislocation etching, X-ray topography, cathodoluminescence, photoluminescence, Hall measurements, photothreshold, and C-V-W measurements on Schottky barriers. Dislocations generated by bending were observed by cathodoluminescence and the effect on electrical properties determined. A new technique for measuring and controlling oxygen in gallium melts was developed and studied.
Sponsored in part by Grant DAHC15-72-G7. See also AD0756259. |
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Sponsored in part by Grant DAHC15-72-G7. See also AD0756259.</description><language>eng</language><subject>BRIDGEMAN GROWTH TECHNIQUE ; CATHODOLUMINESCENCE ; CRYSTAL GROWTH ; Crystallography ; CZOCHRALSKI METHOD ; DISLOCATIONS ; DOPING ; ELECTRICAL PROPERTIES ; EPITAXIAL GROWTH ; FIELD EFFECT TRANSISTORS ; GALLIUM ARSENIDES ; GALLIUM NITRIDES ; GRADIENT FREEZE TECHNIQUE ; HALL EFFECT ; IMPURITIES ; MANUFACTURING ; PHOTOLUMINESCENCE ; PLASTIC DEFORMATION ; POLISHES ; SEMICONDUCTORS ; Solid State Physics ; TRAVELING HEATER METHOD</subject><creationdate>1973</creationdate><rights>Approved for public release; distribution is unlimited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/AD0774967$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wilcox, William R</creatorcontrib><creatorcontrib>Allred, Worth P</creatorcontrib><creatorcontrib>Crowell, Clarence R</creatorcontrib><creatorcontrib>Esquivel, Agerico</creatorcontrib><creatorcontrib>Gershenzon, Murray</creatorcontrib><creatorcontrib>UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB</creatorcontrib><title>New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals</title><description>The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradient freeze, and liquid epitaxy techniques for GaAs growth were developed and studied. The travelling heater method for GaAs and III-V alloys was studied. Material was characterized by spark-source mass spectrometry, ion microprobe mass analyzer, glow-discharge spectroscopy, infrared absorption, dislocation etching, X-ray topography, cathodoluminescence, photoluminescence, Hall measurements, photothreshold, and C-V-W measurements on Schottky barriers. Dislocations generated by bending were observed by cathodoluminescence and the effect on electrical properties determined. A new technique for measuring and controlling oxygen in gallium melts was developed and studied.
Sponsored in part by Grant DAHC15-72-G7. See also AD0756259.</description><subject>BRIDGEMAN GROWTH TECHNIQUE</subject><subject>CATHODOLUMINESCENCE</subject><subject>CRYSTAL GROWTH</subject><subject>Crystallography</subject><subject>CZOCHRALSKI METHOD</subject><subject>DISLOCATIONS</subject><subject>DOPING</subject><subject>ELECTRICAL PROPERTIES</subject><subject>EPITAXIAL GROWTH</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM NITRIDES</subject><subject>GRADIENT FREEZE TECHNIQUE</subject><subject>HALL EFFECT</subject><subject>IMPURITIES</subject><subject>MANUFACTURING</subject><subject>PHOTOLUMINESCENCE</subject><subject>PLASTIC DEFORMATION</subject><subject>POLISHES</subject><subject>SEMICONDUCTORS</subject><subject>Solid State Physics</subject><subject>TRAVELING HEATER METHOD</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1973</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZIjySy1X8E0tychPKVZIyy9ScC_KLy_JUEjMS1FwzkgsSkwuSS3KrEosyczPU8hPU3BPdCwGS_pmVqSmKHh6euqGKQSn5mYm5-ellCaXAE1wLqosLknMKeZhYE0DUqm8UJqbQcbNNcTZQzelJDM5vrgkMy-1JN7RxcDc3MTSzNyYgDQAK5s21g</recordid><startdate>19730630</startdate><enddate>19730630</enddate><creator>Wilcox, William R</creator><creator>Allred, Worth P</creator><creator>Crowell, Clarence R</creator><creator>Esquivel, Agerico</creator><creator>Gershenzon, Murray</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>19730630</creationdate><title>New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals</title><author>Wilcox, William R ; Allred, Worth P ; Crowell, Clarence R ; Esquivel, Agerico ; Gershenzon, Murray</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_AD07749673</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1973</creationdate><topic>BRIDGEMAN GROWTH TECHNIQUE</topic><topic>CATHODOLUMINESCENCE</topic><topic>CRYSTAL GROWTH</topic><topic>Crystallography</topic><topic>CZOCHRALSKI METHOD</topic><topic>DISLOCATIONS</topic><topic>DOPING</topic><topic>ELECTRICAL PROPERTIES</topic><topic>EPITAXIAL GROWTH</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM NITRIDES</topic><topic>GRADIENT FREEZE TECHNIQUE</topic><topic>HALL EFFECT</topic><topic>IMPURITIES</topic><topic>MANUFACTURING</topic><topic>PHOTOLUMINESCENCE</topic><topic>PLASTIC DEFORMATION</topic><topic>POLISHES</topic><topic>SEMICONDUCTORS</topic><topic>Solid State Physics</topic><topic>TRAVELING HEATER METHOD</topic><toplevel>online_resources</toplevel><creatorcontrib>Wilcox, William R</creatorcontrib><creatorcontrib>Allred, Worth P</creatorcontrib><creatorcontrib>Crowell, Clarence R</creatorcontrib><creatorcontrib>Esquivel, Agerico</creatorcontrib><creatorcontrib>Gershenzon, Murray</creatorcontrib><creatorcontrib>UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wilcox, William R</au><au>Allred, Worth P</au><au>Crowell, Clarence R</au><au>Esquivel, Agerico</au><au>Gershenzon, Murray</au><aucorp>UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals</btitle><date>1973-06-30</date><risdate>1973</risdate><abstract>The purpose of this program was to develop new and improved methods for the growth and characterization of gallium arsenide (GaAs) and mixed III-V semiconductor crystals. This was accomplished by laboratory experiments and related theoretical research. New Czochralski, floating zone melting, gradient freeze, and liquid epitaxy techniques for GaAs growth were developed and studied. The travelling heater method for GaAs and III-V alloys was studied. Material was characterized by spark-source mass spectrometry, ion microprobe mass analyzer, glow-discharge spectroscopy, infrared absorption, dislocation etching, X-ray topography, cathodoluminescence, photoluminescence, Hall measurements, photothreshold, and C-V-W measurements on Schottky barriers. Dislocations generated by bending were observed by cathodoluminescence and the effect on electrical properties determined. A new technique for measuring and controlling oxygen in gallium melts was developed and studied.
Sponsored in part by Grant DAHC15-72-G7. See also AD0756259.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | DTIC Technical Reports |
| subjects | BRIDGEMAN GROWTH TECHNIQUE CATHODOLUMINESCENCE CRYSTAL GROWTH Crystallography CZOCHRALSKI METHOD DISLOCATIONS DOPING ELECTRICAL PROPERTIES EPITAXIAL GROWTH FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM NITRIDES GRADIENT FREEZE TECHNIQUE HALL EFFECT IMPURITIES MANUFACTURING PHOTOLUMINESCENCE PLASTIC DEFORMATION POLISHES SEMICONDUCTORS Solid State Physics TRAVELING HEATER METHOD |
| title | New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals |
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