GUNN EFFECT DEVICES

CW operation of Gunn devices was observed in a Gunn mount and a tunable resonant cavity. The frequency tuning behavior, shift in frequency with changing bias voltage, power output, and average dc sample current of the devices were measured. Noise measurements on the Gunn oscillators in a resonant ca...

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Main Author: Yep, T O
Format: Report
Language:English
Subjects:
ARSENIC ALLOYS
CAVITY RESONATORS
Electrical and Electronic Equipment
FREQUENCY MODULATION
GALLIUM ALLOYS
GUNN EFFECT
MICROWAVE OSCILLATORS
MICROWAVES
NOISE
OSCILLATION
PHASE SHIFT CIRCUITS
SEMICONDUCTOR DEVICES
SEMICONDUCTORS
Solid State Physics
TUNING DEVICES
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creator Yep, T O
description CW operation of Gunn devices was observed in a Gunn mount and a tunable resonant cavity. The frequency tuning behavior, shift in frequency with changing bias voltage, power output, and average dc sample current of the devices were measured. Noise measurements on the Gunn oscillators in a resonant cavity showed that FM noise was the predominant type of noise.
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Noise measurements on the Gunn oscillators in a resonant cavity showed that FM noise was the predominant type of noise.</description><language>eng</language><subject>ARSENIC ALLOYS ; CAVITY RESONATORS ; Electrical and Electronic Equipment ; FREQUENCY MODULATION ; GALLIUM ALLOYS ; GUNN EFFECT ; MICROWAVE OSCILLATORS ; MICROWAVES ; NOISE ; OSCILLATION ; PHASE SHIFT CIRCUITS ; SEMICONDUCTOR DEVICES ; SEMICONDUCTORS ; Solid State Physics ; TUNING DEVICES</subject><creationdate>1966</creationdate><rights>Approved for public release; distribution is unlimited.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,776,881,27541,27542</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/AD0801827$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yep, T O</creatorcontrib><creatorcontrib>HEWLETT-PACKARD LABS PALO ALTO CA</creatorcontrib><title>GUNN EFFECT DEVICES</title><description>CW operation of Gunn devices was observed in a Gunn mount and a tunable resonant cavity. The frequency tuning behavior, shift in frequency with changing bias voltage, power output, and average dc sample current of the devices were measured. Noise measurements on the Gunn oscillators in a resonant cavity showed that FM noise was the predominant type of noise.</description><subject>ARSENIC ALLOYS</subject><subject>CAVITY RESONATORS</subject><subject>Electrical and Electronic Equipment</subject><subject>FREQUENCY MODULATION</subject><subject>GALLIUM ALLOYS</subject><subject>GUNN EFFECT</subject><subject>MICROWAVE OSCILLATORS</subject><subject>MICROWAVES</subject><subject>NOISE</subject><subject>OSCILLATION</subject><subject>PHASE SHIFT CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTORS</subject><subject>Solid State Physics</subject><subject>TUNING DEVICES</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1966</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZBB2D_XzU3B1c3N1DlFwcQ3zdHYN5mFgTUvMKU7lhdLcDDJuriHOHropJZnJ8cUlmXmpJfGOLgYWBoYWRubGBKQBHf4bMA</recordid><startdate>196610</startdate><enddate>196610</enddate><creator>Yep, T O</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>196610</creationdate><title>GUNN EFFECT DEVICES</title><author>Yep, T O</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_AD08018273</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1966</creationdate><topic>ARSENIC ALLOYS</topic><topic>CAVITY RESONATORS</topic><topic>Electrical and Electronic Equipment</topic><topic>FREQUENCY MODULATION</topic><topic>GALLIUM ALLOYS</topic><topic>GUNN EFFECT</topic><topic>MICROWAVE OSCILLATORS</topic><topic>MICROWAVES</topic><topic>NOISE</topic><topic>OSCILLATION</topic><topic>PHASE SHIFT CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTORS</topic><topic>Solid State Physics</topic><topic>TUNING DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Yep, T O</creatorcontrib><creatorcontrib>HEWLETT-PACKARD LABS PALO ALTO CA</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yep, T O</au><aucorp>HEWLETT-PACKARD LABS PALO ALTO CA</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>GUNN EFFECT DEVICES</btitle><date>1966-10</date><risdate>1966</risdate><abstract>CW operation of Gunn devices was observed in a Gunn mount and a tunable resonant cavity. The frequency tuning behavior, shift in frequency with changing bias voltage, power output, and average dc sample current of the devices were measured. Noise measurements on the Gunn oscillators in a resonant cavity showed that FM noise was the predominant type of noise.</abstract><oa>free_for_read</oa></addata></record>
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language eng
recordid cdi_dtic_stinet_AD0801827
source DTIC Technical Reports
subjects ARSENIC ALLOYS
CAVITY RESONATORS
Electrical and Electronic Equipment
FREQUENCY MODULATION
GALLIUM ALLOYS
GUNN EFFECT
MICROWAVE OSCILLATORS
MICROWAVES
NOISE
OSCILLATION
PHASE SHIFT CIRCUITS
SEMICONDUCTOR DEVICES
SEMICONDUCTORS
Solid State Physics
TUNING DEVICES
title GUNN EFFECT DEVICES
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