THE APPLICATION OF MOLECULAR RADIATION IN THE PRODUCTION OF P-N TRANSITIONS BY EVAPORATING GERMANIUM TO A DESIRED DEGREE OF DOPING ON A MONOCRYSTALLINE GERMANIUM SUPPORT OF THE OPPOSITE CONDUCTION TYPE

The article reports on previous research in the field and on the preparation of p-n junctions by vapor-coating special germanium substrates with germanium of opposite conductance type. The investigation was carried out in vacuum. As substrates, (111)-oriented, n-conducting germanium single-crystal p...

Full description

Saved in:
Bibliographic Details
Main Author: Poser, H
Format: Report
Language:English
Subjects:
DOPING
EAST GERMANY
Electrical and Electronic Equipment
ELECTRICAL PROPERTIES
ELECTRON IRRADIATION
EPITAXIAL GROWTH
Fabrication Metallurgy
GERMANIUM
MOLECULAR ELECTRONICS
PN JUNCTIONS
SEMICONDUCTORS
SINGLE CRYSTALS
Solid State Physics
SUBSTRATES
THICKNESS
VAPOR PLATING
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The article reports on previous research in the field and on the preparation of p-n junctions by vapor-coating special germanium substrates with germanium of opposite conductance type. The investigation was carried out in vacuum. As substrates, (111)-oriented, n-conducting germanium single-crystal plates with a resistivity of 4 ohm cm were used and the condensation surfaces were polished and chemically etched Germanium of p-type, with a resistivity of 0.004 ohm cm, was used for vapor coating. Heat was supplied via electron bombardment. The excess gas pressure in the recipient was around 0.00005 Torr, and the thickness of the deposited layers around 5 millimicrons. The current-voltage characteristics of the deposited layers were determined from the contacted specimens. The inverse current at 1 V was 20 microamps, which corresponds to a current density of 0.12 mA/sq cm. (Author) Edited trans. of Physica Status Solidi (East Germany) v9 n1 pK9-K11 1965.