A REVIEW OF RAPID ANNEALING IN NEUTRON IRRADIATED SEMICONDUCTORS

Recent Defense Atomic Support Agency (DASA)-funded research in the rapid annealing of fast neutron-induced defects in semiconductor materials and devices is reviewed. Attention is directed to the development of the physical model proposed for the two-stage anneal seen in devices.

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Bibliographic Details
Main Authors: Straw, David C, Kennedy, Stanley O , Sr
Format: Report
Language:English
Subjects:
ANNEALING
CHARGE CARRIERS
DAMAGE
DEFECTS(MATERIALS)
DOPING
ELECTRIC CURRENT
Electrical and Electronic Equipment
ELECTRICAL CONDUCTIVITY
GERMANIUM
INJECTION
MATHEMATICAL ANALYSIS
MINORITY CARRIERS
NEUTRON REACTIONS
Nuclear Physics & Elementary Particle Physics
NUCLEAR RADIATION
RADIATION EFFECTS
Radioactiv, Radioactive Wastes & Fission Prod
SILICON
SOLAR CELLS
TRANSIENT RADIATION EFFECTS(ELECTRONICS)
TRANSISTORS
TRANSPORT PROPERTIES
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Description
Summary:Recent Defense Atomic Support Agency (DASA)-funded research in the rapid annealing of fast neutron-induced defects in semiconductor materials and devices is reviewed. Attention is directed to the development of the physical model proposed for the two-stage anneal seen in devices.