300C SEMICONDUCTOR FOR POWER DEVICES

The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semico...

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Bibliographic Details
Main Authors: Enstrom, R. E, Krassner, L. A
Format: Report
Language:English
Subjects:
ARSENIC GALLIUM PHOSPHIDE
BREAKDOWN VOLTAGE
ELECTRIC TERMINALS
Electrical and Electronic Equipment
ELECTRICAL PROPERTIES
ENVIRONMENTAL TESTS
EPITAXIAL GROWTH
ETCHED CRYSTALS
GALLIUM ARSENIDES
HIGH TEMPERATURE
MANUFACTURING
MECHANICAL PROPERTIES
RECTIFIERS
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
Solid State Physics
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Summary:The successful design and development of a 50-ampere rectifier with reverse breakdown over 150 volts, operable in a 300C ambient temperature, is described. High-operating-temperature and reverse-breakdown requirements led to the choice of gallium arsenide and gallium arsenide-phosphide as the semiconductor materials employed. The rectifier junctions were grown by vapor phase epitaxial techniques, and very-high breakdown voltage was achieved. Growth of defect-free large-area (0.175-mil diameter) junctions was a major accomplishment. A complete process for rectifier fabrication was developed, including etching, contacting, mounting, and junction coating techniques. The results of mechanical, electrical, and environmental tests are presented. (Author)