Development of Microwave Semiconductor Noise Diode and Diode Holder

A diode holder was designed that should allow converage of the frequency band from 2 GHz to 12.4 GHz. Furthermore, the work has involved the fabrication and testing of a semiconductor noise diode. Test results are given for noise power measurements between 2 and 4 GHz and between 8.5 and 12 GHz. (Au...

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Bibliographic Details
Main Authors: Noisten, J, Collinet, J. C
Format: Report
Language:English
Subjects:
AVALANCHE DIODES
C BAND
Electrical and Electronic Equipment
K BAND
MICROWAVE EQUIPMENT
MICROWAVE FREQUENCY
MOUNTINGS
NOISE GENERATORS
NOISE(RADIO)
RADIOFREQUENCY POWER
S BAND
SEMICONDUCTOR JUNCTIONS
SENSITIVITY
X BAND
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Summary:A diode holder was designed that should allow converage of the frequency band from 2 GHz to 12.4 GHz. Furthermore, the work has involved the fabrication and testing of a semiconductor noise diode. Test results are given for noise power measurements between 2 and 4 GHz and between 8.5 and 12 GHz. (Author) See also Quarterly rept. no. 1, AD-858 186.