Development of Microwave Semiconductor Noise Diode and Diode Holder

A microwave integrated circuit, solid state noise source has been designed and tested between the frequency of 8 to 12.4 GHz. Results of the output spectrum noise measurements are presented for temperature variations of -54C to +85C. (Author) See also Quarterly rept. no. 1, AD-858 186.

Saved in:
Bibliographic Details
Main Author: Collinet,J. C
Format: Report
Language:English
Subjects:
AVALANCHE DIODES
Electrical and Electronic Equipment
INTEGRATED CIRCUITS
K BAND
MICROWAVE EQUIPMENT
MICROWAVE FREQUENCY
NOISE GENERATORS
NOISE(RADIO)
RADIOFREQUENCY POWER
X BAND
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A microwave integrated circuit, solid state noise source has been designed and tested between the frequency of 8 to 12.4 GHz. Results of the output spectrum noise measurements are presented for temperature variations of -54C to +85C. (Author) See also Quarterly rept. no. 1, AD-858 186.