Development of Microwave Integrated Circuit Noise Source

The report covers work done on the development of a set of Microwave Integrated-Circuit noise source, suitable to be used in the frequency range of 2 to 12.4 GHz, using a single silicon avalanche diode. Noise theory and experiments to support it are described. Emphasis was put on the frequency band...

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Bibliographic Details
Main Author: Collinet, J. C
Format: Report
Language:English
Subjects:
AVALANCHE DIODES
INTEGRATED CIRCUITS
MICROWAVE EQUIPMENT
NOISE GENERATORS
SILICON
TEST EQUIPMENT
Test Facilities, Equipment and Methods
X BAND
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Summary:The report covers work done on the development of a set of Microwave Integrated-Circuit noise source, suitable to be used in the frequency range of 2 to 12.4 GHz, using a single silicon avalanche diode. Noise theory and experiments to support it are described. Emphasis was put on the frequency band of 8 to 12.4 GHz, where 6 prototypes were evaluated for noise output performance and temperature behavior. (Author)