Research and Development of an Electron Beam Semiconductor Amplifier

Electron Beam Semiconductor Amplifier tubes designated as EE-124, were developed, tested and delivered. Techniques were developed which made it possible to combine, in one vacuum envelope, a grid controlled electron tube type structure, which was used as the input end of the EE-124, and an ion impla...

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Bibliographic Details
Main Authors: Janis, Peter, Merritt, W Harold
Format: Report
Language:English
Subjects:
CURRENT AMPLIFIERS
Electrical and Electronic Equipment
ELECTRON BEAM SEMICONDUCTOR AMPLIFIERS
ELECTRON IRRADIATION
ELECTRON TUBES
SEMICONDUCTOR DIODES
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Summary:Electron Beam Semiconductor Amplifier tubes designated as EE-124, were developed, tested and delivered. Techniques were developed which made it possible to combine, in one vacuum envelope, a grid controlled electron tube type structure, which was used as the input end of the EE-124, and an ion implanted silicon diode which when bombarded by the electron stream from the input structure, produced current gains of over 1000. (Author)