Low Work Function Photocathode

Work performed on a program to develop high quantum yield photocathodes at near infrared wavelengths is summarized. Attempts to form thin films of Ga75In25As on GaAs substrates using vacuum deposition are discussed. Results on photoemission from GaSb covered with a thin (50A) surface layer of GaP ar...

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Bibliographic Details
Main Author: Redington, Rowland W
Format: Report
Language:English
Subjects:
ANTIMONY ALLOYS
Electrical and Electronic Equipment
EPITAXIAL GROWTH
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERMETALLIC COMPOUNDS
NEAR INFRARED RADIATION
PHOSPHIDES
PHOTOCATHODES
PHOTOELECTRIC EFFECT
SEMICONDUCTING FILMS
SEMICONDUCTOR DEVICES
WORK FUNCTIONS
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Summary:Work performed on a program to develop high quantum yield photocathodes at near infrared wavelengths is summarized. Attempts to form thin films of Ga75In25As on GaAs substrates using vacuum deposition are discussed. Results on photoemission from GaSb covered with a thin (50A) surface layer of GaP are presented indicating that the surface work function cannot be lowered in this manner. Efforts to make thin (10 microns self-supporting films of GaAs are described indicating that transparent self-supporting III-V photoemitters are feasible. (Author)