Solid State Ku-Band Source

The objective of this investigation was to develop the Limited Space-charge Accumulation (LSA) technology for both the semiconductor device and the RF circuit to permit efficient high peak power microwave generation, particularly for frequencies above X-band. Realistic pulse lengths and duty cycles...

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Bibliographic Details
Main Authors: Kennedy, W. K, Monroe, J. W, Johnson, E. F, Clark, R. J, Brinkoetter, T. R
Format: Report
Language:English
Subjects:
C BAND
DOPING
EFFICIENCY
Electrical and Electronic Equipment
EPITAXIAL GROWTH
GALLIUM ARSENIDES
K BAND
LIMITED SPACE CHARGE ACCUMULATION
MICROWAVE OSCILLATORS
PACKAGED CIRCUITS
RELIABILITY(ELECTRONICS)
SCHOTTKY BARRIER DEVICES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
THERMAL PROPERTIES
TRANSISTORS
WAVEGUIDES
X BAND
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Summary:The objective of this investigation was to develop the Limited Space-charge Accumulation (LSA) technology for both the semiconductor device and the RF circuit to permit efficient high peak power microwave generation, particularly for frequencies above X-band. Realistic pulse lengths and duty cycles were to be maintained to determine the usefulness of these devices. As part of this program, efficiencies of 22 percent were obtained at 6 GHz. The RF circuits to achieve the state-of-the-art efficiency were also carefully characterized to permit reproducible design. Difficulties with operation at 16 GHz were encountered throughout the program, however, the reasons for these difficulties are discussed as they relate to the GaAs material requirements, RF circuit design and thermal considerations. The results of preliminary lifetests are also reported. (Author)