Detecting Impurity Levels in GaAs using Electroreflectance

The monitoring of the implantation process is the topic of this study. Surface barrier electroreflectance (ER) measurements on the fundamental edge of both melt-doped and ion-implanted gallium arsenide (GaAs) at 300K, using the field-effect technique, reveal structure related to impurity energy leve...

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Bibliographic Details
Main Author: Douglass,Charles A. , III
Format: Report
Language:English
Subjects:
Band theory of solids
Cadmium
Chemical analysis
Chromium
Electric fields
Electroreflectance
Gallium arsenides
Impurities
Ion implantation
Monitoring
Nondestructive testing
Semiconductor doping
Silicon
Solid State Physics
Tellurium
Theses
Tin
Zinc
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Summary:The monitoring of the implantation process is the topic of this study. Surface barrier electroreflectance (ER) measurements on the fundamental edge of both melt-doped and ion-implanted gallium arsenide (GaAs) at 300K, using the field-effect technique, reveal structure related to impurity energy levels. Comparison of ER curves of epitaxial, as-grown, melt-doped, and ion-implanted GaAs shows the broadening of the lineshape due to the presence of impurities. Silicon, chromium, cadmium, tellurium, zinc, and tin impurities in melt-doped GaAs and tellurium, sulfur, cadmium, and zinc impurities in ion-implanted GaAs are related to structure in the ER spectrum. The effect of varying modulated voltage, DC bias, impurity concentration, and annealing on the ER spectrum of GaAs is reported.