Special EBS Devices

This Final Report describes the fabrication and testing of five GaAs Schottky-barrier EBS tubes. To improve the Schottky-barrier characteristics and the reliability of the EBS diode, we have used platinum as the barrier metal rather than chromium. To reduce the electrical resistance, a chromium laye...

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Bibliographic Details
Main Authors: Huang,Ho-Chung, Siekanowicz,Wieslau W, Jolly,Stuart T, San-Paolo,Angela, Janton,Walter M
Format: Report
Language:English
Subjects:
Beam shields
CHROMIUM
EBS diodes
EBS(Electron Beam Semiconductors)
Electrical and Electronic Equipment
Electron beam semiconductor devices
Electron beam semiconductors
ELECTRON GUNS
ELECTRON TUBE TARGETS
GALLIUM ARSENIDES
Magnetic focusing
Mesa structures
Metallization
PLATINUM
SCHOTTKY BARRIER DEVICES
SEMICONDUCTOR DIODES
Solid State Physics
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Summary:This Final Report describes the fabrication and testing of five GaAs Schottky-barrier EBS tubes. To improve the Schottky-barrier characteristics and the reliability of the EBS diode, we have used platinum as the barrier metal rather than chromium. To reduce the electrical resistance, a chromium layer was deposited on top of the platinum layer. Both theoretical calcualtions and experimental results indicate that a Schottky-barrier metallization system consisting of 100-A Pt plus 300-A Cr is nearly optimum for EBS-application. Special EBS tubes employing GaAs platinum Schottky-barrier diodes with integral beam shield were successfully fabricated, evaluated, and delivered to the contracting agency. (Author)