Neutron Damage in Silicon from Neutrons with Energy Near 1-MeV

Silicon diodes have been used to evaluate the damage introduced in silicon by monoenergetic neutrons at several neutron energies near 1 MeV. Eight diodes were irradiated at each of the neutron energies; 0.70, 0.96, 1.16, 1.63 and 2.37 MeV. The results are compared with diodes exposed to 14 MeV neutr...

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Bibliographic Details
Main Authors: Youngblood,J E, Hollandsworth,C E, Van Antwerp,W R
Format: Report
Language:English
Subjects:
ACCURACY
ASH75
COMPUTERIZED SIMULATION
DAMAGE ASSESSMENT
HIGH ENERGY
NEUTRON BEAMS
NUCLEAR EXPLOSION DAMAGE
PE62118A
RADIATION DAMAGE
Radioactiv, Radioactive Wastes & Fission Prod
RATIOS
SEMICONDUCTOR DIODES
SILICON
VARIATIONS
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Summary:Silicon diodes have been used to evaluate the damage introduced in silicon by monoenergetic neutrons at several neutron energies near 1 MeV. Eight diodes were irradiated at each of the neutron energies; 0.70, 0.96, 1.16, 1.63 and 2.37 MeV. The results are compared with diodes exposed to 14 MeV neutrons and with calculations of displacement (permanent) damage. It is shown that the damage fluctuates severely for neutron energies near 1 MeV. (Author)