Noise Measurements on a P-Surface Channel CCD Mulitplexer

The noise performance of a p-surface channel CCD multiplexer was measured at room temperature and at 160 K. Theoretical calculations were made of the contributions from KTC noise, dark current noise and interface state trapping noise. The calculated values agree well with the experimental results. T...

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Bibliographic Details
Main Authors: Jenkins,W C, Killiany,J M, Modolo,J A, Baker,W D
Format: Report
Language:English
Subjects:
CHARGE CARRIERS
CHARGE COUPLED DEVICES
CLOCKS
Cybernetics
Dark current
Fixed pattern noise
INJECTION
Interface states
IRRADIATION
KTC noise
MULTIPLEXING
NOISE ANALYZERS
Optical injection
Optical shot noise
P channels
P TYPE SEMICONDUCTORS
PE62762N
SILICON
Solid State Physics
Surface channels
Trapping noise
WUR0860
Online Access:Request full text
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Summary:The noise performance of a p-surface channel CCD multiplexer was measured at room temperature and at 160 K. Theoretical calculations were made of the contributions from KTC noise, dark current noise and interface state trapping noise. The calculated values agree well with the experimental results. The design goal for these devices was temporal noise voltage of 15 microvolts (3500 rms noise carriers) referenced to the input. Cooled to 160 K we measured a noise voltage of 16 microvolts (3750 rms noise carriers) referenced to the input. The spatial or fixed pattern noise was much larger: 12 millivolts (2.9 x 10 to the 6th power rms noise carriers) referenced to the input. The noise measured on a device irradiated to 10,000 Rad(Si) under bias was approximately twice the value for an unirradiated device. (Author)