MOS Measurement Methods, Design Principles for a Radiation-Hardened CMOS/SOS Memory

The survival of data in a memory through very high levels of transient ionizing radiation ( 10 to the 11th power rads(Si)/sec) has been a very difficult problem. This report describes the principles used in the design of a hardened memory, using CMOS/SOS technology. The design also provides high pac...

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Bibliographic Details
Main Author: Nielsen,Robert L
Format: Report
Language:English
Subjects:
CHIPS(ELECTRONICS)
COMPLEMENTARY METAL OXIDE SEMICONDUCTORS
Computer Hardware
Electrical and Electronic Equipment
GATES(CIRCUITS)
Hardening(Electronics)
INTEGRATED CIRCUITS
IONIZING RADIATION
MEMORY DEVICES
MOS devices
Nuclear Radiation Shield, Protection & Safety
PE62707H
RADIATION HARDENING
Radiation protection
Random access memories
SAPPHIRE
SILICON
Silicon on sapphire
TRANSIENT RADIATION EFFECTS
WU72
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Summary:The survival of data in a memory through very high levels of transient ionizing radiation ( 10 to the 11th power rads(Si)/sec) has been a very difficult problem. This report describes the principles used in the design of a hardened memory, using CMOS/SOS technology. The design also provides high packing density (1024 bits in less than 16000 sq mils), high speed (cycle time or = 350 nsec), low power ( 50 mW) and ease of use (16 pin packaging with a single-chip enable clock). (Author)