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MOS Measurement Methods, Design Principles for a Radiation-Hardened CMOS/SOS Memory

The survival of data in a memory through very high levels of transient ionizing radiation ( 10 to the 11th power rads(Si)/sec) has been a very difficult problem. This report describes the principles used in the design of a hardened memory, using CMOS/SOS technology. The design also provides high pac...

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Main Author:	Nielsen,Robert L
Format:	Report
Language:	English
Subjects:	CHIPS(ELECTRONICS) COMPLEMENTARY METAL OXIDE SEMICONDUCTORS Computer Hardware Electrical and Electronic Equipment GATES(CIRCUITS) Hardening(Electronics) INTEGRATED CIRCUITS IONIZING RADIATION MEMORY DEVICES MOS devices Nuclear Radiation Shield, Protection & Safety PE62707H RADIATION HARDENING Radiation protection Random access memories SAPPHIRE SILICON Silicon on sapphire TRANSIENT RADIATION EFFECTS WU72
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creator	Nielsen,Robert L
description	The survival of data in a memory through very high levels of transient ionizing radiation ( 10 to the 11th power rads(Si)/sec) has been a very difficult problem. This report describes the principles used in the design of a hardened memory, using CMOS/SOS technology. The design also provides high packing density (1024 bits in less than 16000 sq mils), high speed (cycle time or = 350 nsec), low power ( 50 mW) and ease of use (16 pin packaging with a single-chip enable clock). (Author)
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(Author)</description><language>eng</language><subject>CHIPS(ELECTRONICS) ; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS ; Computer Hardware ; Electrical and Electronic Equipment ; GATES(CIRCUITS) ; Hardening(Electronics) ; INTEGRATED CIRCUITS ; IONIZING RADIATION ; MEMORY DEVICES ; MOS devices ; Nuclear Radiation Shield, Protection & Safety ; PE62707H ; RADIATION HARDENING ; Radiation protection ; Random access memories ; SAPPHIRE ; SILICON ; Silicon on sapphire ; TRANSIENT RADIATION EFFECTS ; WU72</subject><creationdate>1979</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27567,27568</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA082191$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nielsen,Robert L</creatorcontrib><creatorcontrib>ROCKWELL INTERNATIONAL ANAHEIM CALIF</creatorcontrib><title>MOS Measurement Methods, Design Principles for a Radiation-Hardened CMOS/SOS Memory</title><description>The survival of data in a memory through very high levels of transient ionizing radiation ( 10 to the 11th power rads(Si)/sec) has been a very difficult problem. 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source	DTIC Technical Reports
subjects	CHIPS(ELECTRONICS) COMPLEMENTARY METAL OXIDE SEMICONDUCTORS Computer Hardware Electrical and Electronic Equipment GATES(CIRCUITS) Hardening(Electronics) INTEGRATED CIRCUITS IONIZING RADIATION MEMORY DEVICES MOS devices Nuclear Radiation Shield, Protection & Safety PE62707H RADIATION HARDENING Radiation protection Random access memories SAPPHIRE SILICON Silicon on sapphire TRANSIENT RADIATION EFFECTS WU72
title	MOS Measurement Methods, Design Principles for a Radiation-Hardened CMOS/SOS Memory
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