Phonon Shifts and Strains in Strain-Layered (Ga1-xInx)As

The phonon frequencies (Raman Technique) and the strains (X-ray rocking curve technique) in (Ga1-xInx) As films is measured on GaAs (100) substrates. Films with various x-values and various thicknesses were studied. The films range from perfect epitaxial ones to those that have relaxed by different...

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Bibliographic Details
Main Authors: Burns,Gerald, Wie,Chu-Ryang, Dacol,Frank H, Petit,G D, Woodall,J M
Format: Report
Language:English
Subjects:
AGREEMENTS
EPITAXIAL GROWTH
FREQUENCY
GALLIUM ARSENIDES
Gallium Indium Arsenide
GRAPHS
INDIUM COMPOUNDS
INTERNAL
PHONONS
RAMAN SPECTRA
SEMICONDUCTING FILMS
SHIFTING
Solid State Physics
SUBSTRATES
THICKNESS
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Summary:The phonon frequencies (Raman Technique) and the strains (X-ray rocking curve technique) in (Ga1-xInx) As films is measured on GaAs (100) substrates. Films with various x-values and various thicknesses were studied. The films range from perfect epitaxial ones to those that have relaxed by different amounts. Using both of these measurements, all of the films gives internal agreement, which indicates that the Raman technique can be used for in situ monitoring of the growth process. Keywords: Gallium Arsenides; Gallium Indium Arsenide.