Defect Control and Denuded Trap Zones in the III-V Semiconductors

The effects of a variety of different treatments on the diffusion lengths in GaAs wafers were investigated. Sealed ampule proximity-capped anneals of 16 hours at 950 C were found to increase minority carrier (hole) diffusion lengths in 1 x 10 to the 17th power Si doped GaAs from initial values of ab...

Full description

Saved in:
Bibliographic Details
Main Authors: Milnes, Arthur G, Schlesinger, Tuviah E
Format: Report
Language:English
Subjects:
ANNEALING
ANTIMONY
BERYLLIUM
BIPOLAR TRANSISTORS
CARRIER LIFETIME
CHARGE CARRIERS
CONTROL
CORRELATION
CROSS SECTIONS
DEFECT CONTROL
DENSITY
DIFFUSION
DOPING
Electrical and Electronic Equipment
ELECTRON CAPTURE
ELECTRON DENSITY
ELECTRONS
EPITAXIAL GROWTH
GALLIUM ARSENIDES
GROUP III COMPOUNDS
GROUP V COMPOUNDS
HOLES(ELECTRON DEFICIENCIES)
INDIUM
ISOELECTRONIC DOPING
LAYERS
LENGTH
MBE(MOLECULAR BEAM EPITAXY)
MOLECULAR BEAMS
N TYPE SEMICONDUCTORS
P TYPE SEMICONDUCTORS
REDUCTION
SEMICONDUCTORS
SILICON
Solid State Physics
TRAPPING(CHARGED PARTICLES)
WAFERS
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of a variety of different treatments on the diffusion lengths in GaAs wafers were investigated. Sealed ampule proximity-capped anneals of 16 hours at 950 C were found to increase minority carrier (hole) diffusion lengths in 1 x 10 to the 17th power Si doped GaAs from initial values of about 0.8 microns to 1.9 microns. This improvement appears to be associated with the reduction in density of a hole trap at E sub v + 0.3 eV which has a capture cross-section in the 10 to the minus 14th to 10 to the minus 15th sq cm range. The proximity anneal also greatly reduced the densities of electron traps, including EL2, but there was no direct correlation of electron trap density and improved carrier lifetime. In other studies the effects of isoelectronic In and Sb doping on the hole traps in Be-doped p-GaAs and electron traps in Si-doped n- GaAs (100) grown by molecular beam epitaxy (MBE) were investigated. The addition of 0.2 to 1% indium causes large reductions of electron trap densities in layers grown at 550 C and also reduces certain hole traps. Homojunction GaAs bipolar transistors npn and pnp have been fabricated with base layers containing In isoelectronic doping and are found to have significantly better characteristics than if the In is omitted. Keywords: Gallium arsenide; Diffusion lengths; Carrier lifetime; MBE; Isoelectronic doping; Indium; Charge carriers; Electron capture; Antimony; Beryllium.