Nucleation and Growth of Diamond on Carbon-Implanted Single Crystal Copper

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implanta...

Full description

Saved in:
Bibliographic Details
Main Authors: Ong, T P, Xiong, Fulin, Chang, R P, White, C W
Format: Report
Language:English
Subjects:
AUGMENTATION
CARBON
CARBON-IMPLANTED
CHEMICALS
COPPER
COPPER CRYSTALS
CRYSTALS
DEPOSITION
DIAMOND GROWTH MECHANISM
DIAMONDS
GRAPHITE
IMPLANTATION
ION IMPLANTATION
IONS
MICROWAVES
NUCLEATION
Physical Chemistry
SINGLE CRYSTALS
SURFACES
VAPOR DEPOSITION
VAPORS
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (-820 C). This procedure leads to the formation of a graphite film on the copper surface, resulting in the great enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 111 parallel to 0001 and 110 parallel to 1120. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces. Prepared for publication in Journal of Materials Research