Process Toward a Comprehensive Control System for Molecular Beam Epitaxy

A hierarchical control system for improving the manufacturing capability of the thin-film semiconductor growth process, Molecular Beam Epitaxy, is under development at the Air Force Materials Directorate. The focus of the first level is to improve the precision and tracking of the variables, flux an...

Full description

Saved in:
Bibliographic Details
Main Authors: Patterson, Oliver D, Heyob, Jeffrey J, Adams, Steven J, Hunt, Victor, Garrett, Patrick H
Format: Report
Language:English
Subjects:
AIR FORCE
ARSENIDES
Atomic and Molecular Physics and Spectroscopy
AUTOMATIC
AUTOMATIC PROCESS
CONTROL
CONTROL SYSTEMS
Crystallography
Electrical and Electronic Equipment
EPITAXIAL GROWTH
EX SITU
EXPERIMENTAL DATA
EXPERT SYSTEMS
FLUX(RATE)
GALLIUM
GALLIUM ARSENIDES
HIERARCHIES
IDENTIFICATION
IMPACT
Inorganic Chemistry
INPUT
MANUFACTURING
MATERIALS
MOLECULAR BEAMS
MONITORS
NETWORKS
NEURAL NETS
PRECISION
REAL TIME
SELF-DIRECTED
SEMICONDUCTORS
SUBSTRATES
TEMPERATURE
THIN FILMS
TRACKING
VARIABLES
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A hierarchical control system for improving the manufacturing capability of the thin-film semiconductor growth process, Molecular Beam Epitaxy, is under development at the Air Force Materials Directorate. The focus of the first level is to improve the precision and tracking of the variables, flux and substrate temperature. The second level consists of an expert system that uses sensors to monitor the status of the product in order to generate a process plan in real time. The third level features a continuously evolving neural network model of the process which is used to recommend the recipe and command inputs to achieve a desired product goal. All three levels require models of the process which are updated using automatic process identification experiments. The three levels of the system are described and experimental data is used to illustrate the impact of select modules... Molecular beam epitaxy, Thin-Film semiconductors, Gallium arsenide, Hierarchical control, Self-Directed control, Neural network, Real time.