Ferroelectric Thin Films III, Symposium Held in San Francisco, California on April 13 - 16, 1993. Materials Research Society Symposium Proceedings, Volume 310

This symposium showcased the advancement in processing technology and basic scientific understanding of ferroelectric thin films. The conference highlighted the use of novel materials science analysis techniques to characterize ferroelectric thin film materials and devices and to relate the nanoscal...

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Bibliographic Details
Main Authors: Myers, Edward R, Tuttle, Bruce A, Desu, Seshu B, Larsen, Poul K
Format: Report
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
BACKSCATTERING
BARIUM
CERAMIC MATERIALS
CHEMICAL VAPOR DEPOSITION
Coatings, Colorants and Finishes
DISPLACEMENT
ELECTRICAL PROPERTIES
Electricity and Magnetism
ELECTRODES
ELECTRON MICROSCOPY
ELECTRON SPIN RESONANCE
ELECTROOPTICS
FERROELECTRIC MATERIALS
HIGH RESOLUTION
INTERFEROMETRY
NIOBIUM
NUCLEAR REACTIONS
Optics
OPTOELECTRONIC DEVICES
PIEZOELECTRIC MATERIALS
PYROLYSIS
RUTHERFORD BACKSCATTERING
Solid State Physics
SPUTTERING
SYMPOSIA
THIN FILMS
THREE DIMENSIONAL
TRANSMISSION
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Summary:This symposium showcased the advancement in processing technology and basic scientific understanding of ferroelectric thin films. The conference highlighted the use of novel materials science analysis techniques to characterize ferroelectric thin film materials and devices and to relate the nanoscale features and responses detected by these techniques to ferroelectric, electrooptic and piezoelectric properties. Examples of newer material analysis techniques included atomic force microscopy, electron spin resonance, high resolution transmission electron microscopy, combined Rutherford backscattering- nuclear reaction analysis and the use of optical interferometry to provide a three dimensional representation of field induced displacement.