Workshop on Intelligent Processing for MBE and MOCVD Held in Santa Fe, New Mexico on 27-28 January 1993

The Workshop on Intelligent Processing for MBE and MOCVD was held in Santa Fe, New Mexico on January 27 & 28, 1993. It assembled approximately fifty(50) researchers in the field of advanced sensors and controls to address issues in realization of intelligent control of MBE and MOCVD for III-V an...

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Bibliographic Details
Main Author: Maracas, George N
Format: Report
Language:English
Subjects:
ALGORITHMS
ARTIFICIAL INTELLIGENCE
Atomic and Molecular Physics and Spectroscopy
CHEMICAL VAPOR DEPOSITION
CONTROL SYSTEMS
CONTROL THEORY
COSTS
Crystallography
Cybernetics
DETECTORS
DIAGNOSTIC EQUIPMENT
DOPING
ELECTRONICS
EPITAXIAL GROWTH
FIELD EFFECT TRANSISTORS
GROUP III COMPOUNDS
GROUP III-V COMPOUNDS
GROUP IIVI COMPOUNDS
GROUP IV COMPOUNDS
GROUP V COMPOUNDS
GROWTH(GENERAL)
MEXICO
MOCVD(METAL ORGANIC CHEMICAL VAPOR DEPOSITION)
MODFET(MODULATION DOPED FIELD EFFECT TRANSISTORS)
MODULATION
MOLECULAR BEAMS
NEW MEXICO
ORGANOMETALLIC COMPOUNDS
PHOTONICS
Physical Chemistry
PROCESSING
QUANTUM ELECTRONICS
QUANTUM WELLS
REAL TIME
RESONANCE
RTT(RESONANT TUNNELING TRANSISTORS)
SEMICONDUCTORS
STRUCTURES
THEORY
TIME
TUNNELING
WORKSHOPS
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Summary:The Workshop on Intelligent Processing for MBE and MOCVD was held in Santa Fe, New Mexico on January 27 & 28, 1993. It assembled approximately fifty(50) researchers in the field of advanced sensors and controls to address issues in realization of intelligent control of MBE and MOCVD for III-V and 11- VI devices. The workshop consisted of open sessions and presentations from researchers in the field of growth, sensors and control theory. MBE and MOCVD, presently being the two primary epitaxial growth technologies for quantum structured devices, were discussed to identify issues and directions for sensor and control algorithm development toward the realization of future electronic and photonic devices. Issues discussed were the present status of growth technologies, sensors for in-situ diagnostics, algorithms for real time control and cost of sensor implementation. Possibilities for future intelligent epitaxial systems and the insertion of the sensor/control systems into the technology base were also considered. Intelligent processing for MBE and MOCVD.