Workshop on Intelligent Processing for MBE and MOCVD Held in Santa Fe, New Mexico on 27-28 January 1993

• Main Author: Maracas, George N
• Format: Report
• Language: English
• Subjects: ALGORITHMS; ARTIFICIAL INTELLIGENCE; Atomic and Molecular Physics and Spectroscopy; CHEMICAL VAPOR DEPOSITION; CONTROL SYSTEMS; CONTROL THEORY; COSTS; Crystallography; Cybernetics; DETECTORS; DIAGNOSTIC EQUIPMENT; DOPING; ELECTRONICS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GROUP III COMPOUNDS; GROUP III-V COMPOUNDS; GROUP IIVI COMPOUNDS; GROUP IV COMPOUNDS; GROUP V COMPOUNDS; GROWTH(GENERAL); MEXICO; MOCVD(METAL ORGANIC CHEMICAL VAPOR DEPOSITION); MODFET(MODULATION DOPED FIELD EFFECT TRANSISTORS); MODULATION; MOLECULAR BEAMS; NEW MEXICO; ORGANOMETALLIC COMPOUNDS; PHOTONICS; Physical Chemistry; PROCESSING; QUANTUM ELECTRONICS; QUANTUM WELLS; REAL TIME; RESONANCE; RTT(RESONANT TUNNELING TRANSISTORS); SEMICONDUCTORS; STRUCTURES; THEORY; TIME; TUNNELING; WORKSHOPS

The Workshop on Intelligent Processing for MBE and MOCVD was held in Santa Fe, New Mexico on January 27 & 28, 1993. It assembled approximately fifty(50) researchers in the field of advanced sensors and controls to address issues in realization of intelligent control of MBE and MOCVD for III-V and 11- VI devices. The workshop consisted of open sessions and presentations from researchers in the field of growth, sensors and control theory. MBE and MOCVD, presently being the two primary epitaxial growth technologies for quantum structured devices, were discussed to identify issues and directions for sensor and control algorithm development toward the realization of future electronic and photonic devices. Issues discussed were the present status of growth technologies, sensors for in-situ diagnostics, algorithms for real time control and cost of sensor implementation. Possibilities for future intelligent epitaxial systems and the insertion of the sensor/control systems into the technology base were also considered. Intelligent processing for MBE and MOCVD.