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Synthesis of Nanocrystalline Indium Arsenide and Indium Phosphide from Indium(llI) Halides and Tris(trimethylsilyl)pnicogens; Synthesis, Characterization, and Decomposition Behavior of I3In.P(SiMe3)3

Nanocrystalline indium arsenide and indium phosphide were synthesized by heating the products of the independent 1:1 mole ratio reactions of InX3 (X = Cl, Br, I) with As(SiMe3)3 and P(SiMe3)3, respectively, and the 2:1 mole ratio reaction of InCl3 with As(SiMe3)3. The 1:1 mole ratio reaction of As(S...

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Main Authors: Wells, Richard L, Aubuchon, Steven R, Kher, Shreyas S, Lube, Michael S, White, Peter S
Format: Report
Language:English
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Summary:Nanocrystalline indium arsenide and indium phosphide were synthesized by heating the products of the independent 1:1 mole ratio reactions of InX3 (X = Cl, Br, I) with As(SiMe3)3 and P(SiMe3)3, respectively, and the 2:1 mole ratio reaction of InCl3 with As(SiMe3)3. The 1:1 mole ratio reaction of As(SiMe3)3 with InCl3 produced a black powder, which after annealing at 400 deg C afforded InAs crystallites of up to 99.96% purity with an average domain size of 9 nm. InAs obtained from the separate 1:1 mole ratio reactions of InBr3 and InI3 with As(SiMe3)3 and the 2:1 mole ratio reaction of InCl3 with As(SiMe3)3 consisted of crystallites with average domain sizes of 10, 12, and 16 nm, and purities of 99.65%, 85.95%, and 87.90%, respectively. The independent 1:1 mole ratio reactions of InCl3 and InBr3 with P(SiMe3)3 both produced colored powders, which after annealing afforded nanocrystalline InP particles with respective purities of 91.53% and 93.08% and average domain size of approximately 4 nm for both samples. The 1:1 mole reaction of InI3 with P(SiMe3)3 afforded the 1:1 adduct I3In.P(SiMe3)3 (I). Compound 1 crystallizes in the monoclinic system, space group P (2 sub 1/c), with a = 16.074(7), b = 9.730(3), C = 16.454(6) A, V = 2362.1(15) A(3), D(sub calc) = 2.098 g/cu cm for Z = 4; the In-P bond length is 2.537(3) A. Decomposition of 1 affords nanocrystalline InP of 84.06% purity with an approximate average domain size of 2.5 nm. jg