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Reconfigurable Antennas

A radio frequency (RF) antenna was demonstrated by exciting charge carriers in a semiconductor. Using a common camera flash and a custom mask, portions of a four inch diameter silicon wafer were illuminated to form a temporary electrically conductive pathway. The conductive path would momentarily mi...

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Main Author:	Ho, Ping-Tong
Format:	Report
Language:	English
Subjects:	CHARGE CARRIERS CONDUCTIVITY DIPOLE ANTENNAS Electrical and Electronic Equipment Electricity and Magnetism ILLUMINATION LAYERS LINEAR DIPOLES MASKS PE62702E RADIOFREQUENCY RECONFIGURABLE ANTENNAS SEMICONDUCTORS SILICON THINNESS WAFERS WURLA1500002
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creator	Ho, Ping-Tong
description	A radio frequency (RF) antenna was demonstrated by exciting charge carriers in a semiconductor. Using a common camera flash and a custom mask, portions of a four inch diameter silicon wafer were illuminated to form a temporary electrically conductive pathway. The conductive path would momentarily mimic a thin layer metallic antenna through which RF energy could be received or transmitted. Experiments in the 1-4 GHz range showed the optically excited semiconductor antennas to be about 5 dB less efficient than similar dipole and bow-tie design metallic antennas. The silicon used had a carrier lifetime of approximately five microseconds when illuminated with an optical intensity of 1O watts per square centimeter. Changing illumination masks would allow the semiconductor antenna to be reconfigured to a variety of different antenna designs.
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fullrecord	<record><control><sourceid>dtic_1RU</sourceid><recordid>TN_cdi_dtic_stinet_ADA304993</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ADA304993</sourcerecordid><originalsourceid>FETCH-dtic_stinet_ADA3049933</originalsourceid><addsrcrecordid>eNrjZBAPSk3Oz0vLTC8tSkzKSVVwzCtJzctLLOZhYE1LzClO5YXS3Awybq4hzh66KSWZyfHFJZl5qSXxji6OxgYmlpbGxgSkAYfWHzI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>report</recordtype></control><display><type>report</type><title>Reconfigurable Antennas</title><source>DTIC Technical Reports</source><creator>Ho, Ping-Tong</creator><creatorcontrib>Ho, Ping-Tong ; MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING</creatorcontrib><description>A radio frequency (RF) antenna was demonstrated by exciting charge carriers in a semiconductor. Using a common camera flash and a custom mask, portions of a four inch diameter silicon wafer were illuminated to form a temporary electrically conductive pathway. The conductive path would momentarily mimic a thin layer metallic antenna through which RF energy could be received or transmitted. Experiments in the 1-4 GHz range showed the optically excited semiconductor antennas to be about 5 dB less efficient than similar dipole and bow-tie design metallic antennas. The silicon used had a carrier lifetime of approximately five microseconds when illuminated with an optical intensity of 1O watts per square centimeter. Changing illumination masks would allow the semiconductor antenna to be reconfigured to a variety of different antenna designs.</description><language>eng</language><subject>CHARGE CARRIERS ; CONDUCTIVITY ; DIPOLE ANTENNAS ; Electrical and Electronic Equipment ; Electricity and Magnetism ; ILLUMINATION ; LAYERS ; LINEAR DIPOLES ; MASKS ; PE62702E ; RADIOFREQUENCY ; RECONFIGURABLE ANTENNAS ; SEMICONDUCTORS ; SILICON ; THINNESS ; WAFERS ; WURLA1500002</subject><creationdate>1996</creationdate><rights>APPROVED FOR PUBLIC RELEASE</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,780,885,27565,27566</link.rule.ids><linktorsrc>$$Uhttps://apps.dtic.mil/sti/citations/ADA304993$$EView_record_in_DTIC$$FView_record_in_$$GDTIC$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ho, Ping-Tong</creatorcontrib><creatorcontrib>MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING</creatorcontrib><title>Reconfigurable Antennas</title><description>A radio frequency (RF) antenna was demonstrated by exciting charge carriers in a semiconductor. Using a common camera flash and a custom mask, portions of a four inch diameter silicon wafer were illuminated to form a temporary electrically conductive pathway. The conductive path would momentarily mimic a thin layer metallic antenna through which RF energy could be received or transmitted. Experiments in the 1-4 GHz range showed the optically excited semiconductor antennas to be about 5 dB less efficient than similar dipole and bow-tie design metallic antennas. The silicon used had a carrier lifetime of approximately five microseconds when illuminated with an optical intensity of 1O watts per square centimeter. Changing illumination masks would allow the semiconductor antenna to be reconfigured to a variety of different antenna designs.</description><subject>CHARGE CARRIERS</subject><subject>CONDUCTIVITY</subject><subject>DIPOLE ANTENNAS</subject><subject>Electrical and Electronic Equipment</subject><subject>Electricity and Magnetism</subject><subject>ILLUMINATION</subject><subject>LAYERS</subject><subject>LINEAR DIPOLES</subject><subject>MASKS</subject><subject>PE62702E</subject><subject>RADIOFREQUENCY</subject><subject>RECONFIGURABLE ANTENNAS</subject><subject>SEMICONDUCTORS</subject><subject>SILICON</subject><subject>THINNESS</subject><subject>WAFERS</subject><subject>WURLA1500002</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1996</creationdate><recordtype>report</recordtype><sourceid>1RU</sourceid><recordid>eNrjZBAPSk3Oz0vLTC8tSkzKSVVwzCtJzctLLOZhYE1LzClO5YXS3Awybq4hzh66KSWZyfHFJZl5qSXxji6OxgYmlpbGxgSkAYfWHzI</recordid><startdate>199601</startdate><enddate>199601</enddate><creator>Ho, Ping-Tong</creator><scope>1RU</scope><scope>BHM</scope></search><sort><creationdate>199601</creationdate><title>Reconfigurable Antennas</title><author>Ho, Ping-Tong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-dtic_stinet_ADA3049933</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1996</creationdate><topic>CHARGE CARRIERS</topic><topic>CONDUCTIVITY</topic><topic>DIPOLE ANTENNAS</topic><topic>Electrical and Electronic Equipment</topic><topic>Electricity and Magnetism</topic><topic>ILLUMINATION</topic><topic>LAYERS</topic><topic>LINEAR DIPOLES</topic><topic>MASKS</topic><topic>PE62702E</topic><topic>RADIOFREQUENCY</topic><topic>RECONFIGURABLE ANTENNAS</topic><topic>SEMICONDUCTORS</topic><topic>SILICON</topic><topic>THINNESS</topic><topic>WAFERS</topic><topic>WURLA1500002</topic><toplevel>online_resources</toplevel><creatorcontrib>Ho, Ping-Tong</creatorcontrib><creatorcontrib>MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING</creatorcontrib><collection>DTIC Technical Reports</collection><collection>DTIC STINET</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ho, Ping-Tong</au><aucorp>MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING</aucorp><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>Reconfigurable Antennas</btitle><date>1996-01</date><risdate>1996</risdate><abstract>A radio frequency (RF) antenna was demonstrated by exciting charge carriers in a semiconductor. Using a common camera flash and a custom mask, portions of a four inch diameter silicon wafer were illuminated to form a temporary electrically conductive pathway. The conductive path would momentarily mimic a thin layer metallic antenna through which RF energy could be received or transmitted. Experiments in the 1-4 GHz range showed the optically excited semiconductor antennas to be about 5 dB less efficient than similar dipole and bow-tie design metallic antennas. The silicon used had a carrier lifetime of approximately five microseconds when illuminated with an optical intensity of 1O watts per square centimeter. Changing illumination masks would allow the semiconductor antenna to be reconfigured to a variety of different antenna designs.</abstract><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_dtic_stinet_ADA304993
source	DTIC Technical Reports
subjects	CHARGE CARRIERS CONDUCTIVITY DIPOLE ANTENNAS Electrical and Electronic Equipment Electricity and Magnetism ILLUMINATION LAYERS LINEAR DIPOLES MASKS PE62702E RADIOFREQUENCY RECONFIGURABLE ANTENNAS SEMICONDUCTORS SILICON THINNESS WAFERS WURLA1500002
title	Reconfigurable Antennas
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T19%3A57%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-dtic_1RU&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=unknown&rft.btitle=Reconfigurable%20Antennas&rft.au=Ho,%20Ping-Tong&rft.aucorp=MARYLAND%20UNIV%20COLLEGE%20PARK%20DEPT%20OF%20ELECTRICAL%20ENGINEERING&rft.date=1996-01&rft_id=info:doi/&rft_dat=%3Cdtic_1RU%3EADA304993%3C/dtic_1RU%3E%3Cgrp_id%3Ecdi_FETCH-dtic_stinet_ADA3049933%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true