High Purity ZnS/Ge Interference Filter Emittance

Data are presented that demonstrate infrared thin film interference filters made with CVD zinc sulfide start materials exhibit significantly higher spectral emittance than those made with IRTRAN II. A simple radiometric model and comparative analysis are discussed that indicates elevated filter emit...

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Main Authors: Clement, Russel E, Elliott, Clyde, Fisher, Jon
Format: Report
Language:English
Subjects:
ANTIMISSILE DEFENSE SYSTEMS
CHEMICAL VAPOR DEPOSITION
COMMAND CONTROL COMMUNICATIONS
Infrared Detection and Detectors
INFRARED DETECTORS
INFRARED FILTERS
INFRARED SEEKERS
Optics
PE47700D
RADIOMETRY
THIN FILMS
ZINC SULFIDES
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Elliott, Clyde
Fisher, Jon
description Data are presented that demonstrate infrared thin film interference filters made with CVD zinc sulfide start materials exhibit significantly higher spectral emittance than those made with IRTRAN II. A simple radiometric model and comparative analysis are discussed that indicates elevated filter emittance levels may adversely impact infrared sensors and seekers designed to operate in the 7 - 15 micron region. It is expected that systems that incorporate filters made with CVD ZnS could exhibit anomalous high backgrounds, image blurring or optical cross talk. Prepared in collaboration with Mission Research Corp., Huntsville, AL. Presented at Proceedings of 1999 Meeting of the MSS Specialty Group on Infrared Materials, v1 n1 p129-141, Oct 99.
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source DTIC Technical Reports
subjects ANTIMISSILE DEFENSE SYSTEMS
CHEMICAL VAPOR DEPOSITION
COMMAND CONTROL COMMUNICATIONS
Infrared Detection and Detectors
INFRARED DETECTORS
INFRARED FILTERS
INFRARED SEEKERS
Optics
PE47700D
RADIOMETRY
THIN FILMS
ZINC SULFIDES
title High Purity ZnS/Ge Interference Filter Emittance
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