AASERT Support of Research in Refractory III-V Semiconductors

The students conducted research in conjunction with Prof. Wicks' ONR program, Refractory Semiconductors. Major findings of the students' research are listed below: 1. Native oxidation of AlN and GaN surfaces. Unlike the other Al- or Ga-containing III-V's, air exposure of AlN and GaN d...

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Bibliographic Details
Main Author: Wicks, Gary W
Format: Report
Language:English
Subjects:
ALUMINUM NITRIDES
AMMONIA
BORON NITRIDES
CRYSTAL LATTICES
Electrical and Electronic Equipment
ELECTRON ACCEPTORS
FINE GRAINED MATERIALS
GALLIUM ARSENIDES
GALLIUM NITRIDES
GROUP III-V COMPOUNDS
MOLECULAR BEAM EPITAXY
NATIVE OXIDATION
OXIDATION
REFRACTORY METALS
SEMICONDUCTORS
SILICON
SINGLE CRYSTALS
SOLID STATE CHEMISTRY
SUBSTRATES
TEMPERATURE
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Summary:The students conducted research in conjunction with Prof. Wicks' ONR program, Refractory Semiconductors. Major findings of the students' research are listed below: 1. Native oxidation of AlN and GaN surfaces. Unlike the other Al- or Ga-containing III-V's, air exposure of AlN and GaN does not form a several-monolayer-thick Ga2O3 surface layer. 2. Boron can be incorporated into GaAs up to concentrations of several percent. Some of the boron incorporates on the growth III site, increasing the bandgap; some incorporates on the growth V site as a double acceptor. 3. Boron can be substitionally incorporated into GaN and AlN up to concentrations of a few percent. Lattice constant shrinks and bandgaps increases with increasing boron concentrations, but material quality degrades. 4. Boron Nitride grown by MBE is fine grain polycrystalline. 5. GaN and AlN can be grown crack-free on silicon substrates if layer thickness is kept less than a micron and growth temperature is limited to 675 deg C or lower. 6. Lateral epitaxial overgrowth of GaN on patterned SiO2 is possible with ammonia based MBE, but not with nitrogen plasma-based MBE.