200 deg C Operation of a DC-DC Converter with SiC Power Devices

Design, operation, and performance evaluation of a 180 W, 100 kHz, 270 V/28 V two-transistor forward dc-dc power converter are reported for elevated temperatures up to 200 deg C. Use of SiC power semiconductor devices, and high temperature powdered ferrite (for magnetics design), and characterizatio...

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Bibliographic Details
Main Authors: Ray, Biswajit, Kosai, Hiroyuki, Scofield, James D, Jordan, Brett
Format: Report
Language:English
Subjects:
BIPOLAR TRANSISTORS
BJT(BIPOLAR JUNCTION TRANSISTORS)
CERAMIC CAPACITORS
DC TO DC CONVERTERS
Electrical and Electronic Equipment
FERRITES
HIGH TEMPERATURE
LEAKAGE(ELECTRICAL)
MAGNETIC DEVICES
PE65503F
POWER DEVICES
PREPRINTS
SEMICONDUCTOR DEVICES
SILICON CARBIDES
SYMPOSIA
WUAFRL3145SR73
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Summary:Design, operation, and performance evaluation of a 180 W, 100 kHz, 270 V/28 V two-transistor forward dc-dc power converter are reported for elevated temperatures up to 200 deg C. Use of SiC power semiconductor devices, and high temperature powdered ferrite (for magnetics design), and characterization of ceramic (X7R) capacitors' leakage current over temperature are presented as well. Submitted for presentation at the Applied Power Electronics Conference, 2007. Prepared in cooperation with Bloomsburg University of Pennsylvania, Bloomsburg, PA. Prepared in collaboration with Air Force Research Laboratory, Electrical Technology and Plasma Physics Branch (AFRL/PRPE), Wright-Patterson AFB, OH.