Mid-Infrared Optically Pumped, Unstable Resonator Lasers (Postprint)

The authors describe high-brightness, broad area midinfrared semiconductor lasers. These devices were fabricated in the authors laboratory using a commercial solid-source molecular beam epitaxial system. The laser structures incorporated 14 type-II quantum wells embedded in thick waveguide/ absorber...

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Bibliographic Details
Main Authors: Ongstad, A P, Kaspi, R, Dente, G C, Tilton, M L, Chavez, J
Format: Report
Language:English
Subjects:
62605F
ANTIMONIDE
BRIGHTNESS
CYLINDRICAL BODIES
EMPIRICAL PSEUDOPOTENTIALS
GAIN
HOLE DILUTION
HOLE LEAKAGE
INTERMEDIATE INFRARED RADIATION
INTERNAL EFFICIENCY
LABORATORIES
Lasers and Masers
MID-INFRARED LASERS
MIRRORS
OPERATION
OPTICAL PUMPING
OPTICALLY PUMPED SEMICONDUCTOR LASER
Optics
PEAK POWER
QUANTUM WELLS
RESONATORS
SEMICONDUCTOR LASERS
STABILIZATION
STRUCTURES
THERMAL DEGRADATION
W LASER
WAVEGUIDE LOSS
WUAFRL4866LY12
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Summary:The authors describe high-brightness, broad area midinfrared semiconductor lasers. These devices were fabricated in the authors laboratory using a commercial solid-source molecular beam epitaxial system. The laser structures incorporated 14 type-II quantum wells embedded in thick waveguide/ absorber regions composed of In0.2Ga0.8As0.18Sb0.82. The optically pumped devices achieved higher brightness operation as unstable resonators. Each unstable resonator was realized by polishing a diverging cylindrical mirror at one of the facets. For an unstable resonator semiconductor laser operating at 4.6 m, near 84 K, and at a peak power of 6.7 W, the device was observed to be nearly diffraction limited at 25 times threshold. In comparison, a standard Fabry-P rot laser was observed to be many times diffraction limited when operated under similar conditions. Pub. in Applied Physics Letters, v90, p191107-1/191107-3 ,2007.