Graphite and BN/AlN Annealing Caps for Ion Implanted SiC

The activation of dopants for wide band-gap semiconductors such as SiC is a subject of much research. Silicon Carbide is problematic as Si sublimates from the SiC matrix at the temperatures required for activation. We have investigated the success of capping SiC substrates with more thermally stabil...

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Main Authors: Wood, M C, Jones, K A, Zheleva, T S, Kirchner, K W, Derenge, M A, Bolonikov, A, Sudarshan, T S, Vispute, D, Hullavarad, S S, Dhar, S
Format: Report
Language:English
Subjects:
ALUMINUM NITRIDES
ANNEALING
CRYSTAL STRUCTURE
CRYSTALLITES
Crystallography
DOPANTS
DOPING
Electrical and Electronic Equipment
GRAPHITE
Industrial Chemistry and Chemical Processing
SILICON CARBIDES
SUBLIMATION
SURFACE CAPPING
SYMPOSIA
THERMAL STABILITY
TRANSITION LAYERS
WIDE BAND-GAP SEMICONDUCTORS
WIDE GAP SEMICONDUCTORS
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Summary:The activation of dopants for wide band-gap semiconductors such as SiC is a subject of much research. Silicon Carbide is problematic as Si sublimates from the SiC matrix at the temperatures required for activation. We have investigated the success of capping SiC substrates with more thermally stabile materials to impede Si sublimation. We present data taken from the SiC capping strategies using carbon and AlN/BN surface caps. We found that the C cap protects the surface at all analyzed annealing temperatures. While the nitride cap protects the surface at all temperatures, however, it was very difficult to remove. There were modest increases in the sheet resistance for the C capped material when compared to the nitride capped material with the exception of the graphite capped 1800 degree sample. Prepared in collaboration with the Electrical Engineering Deparment, University of South Carolina, Columbia, SC and the Physics Department, University of Maryland, College Park, MD. Presented at the Army Science Conference (25th), Transformational Army Science and Technology - Charting the future of S&T for the Soldier, held in Orlando, Florida on 27-30 Nov 2006. Published in proceedings of the same. See also ADM002075. The original document contains color images.