The Structure of Sb-Terminated GaAs(001) Surfaces

We have studied the structure of Sb-terminated GaAs(001) surfaces using reflection high energy electron diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy (STM). Clean, As-terminated (2*4) surfaces were prepared by molecular beam epitaxy and then exposed to Sb4 at 490 C...

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Bibliographic Details
Main Authors: Whitman, L J, Bennett, B R, Kneedler, E M, Jonker, B T, Shanabrook, B V
Format: Report
Language:English
Subjects:
ANTIMONY
Atomic and Molecular Physics and Spectroscopy
CHEMISORPTION
Crystallography
ELECTRON MICROSCOPY
ELECTRONIC SCANNERS
GALLIUM ARSENIDES
Inorganic Chemistry
LOW INDEX SINGLE CRYSTAL SURFACES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
ROUGHNESS
SCANNING TUNNELING MICROSCOPY
SURFACE STRUCTURE
TOPOGRAPHY
TUNNELING(ELECTRONICS)
VACUUM
X RAY DIFFRACTION
X RAY PHOTOELECTRON SPECTROSCOPY
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Summary:We have studied the structure of Sb-terminated GaAs(001) surfaces using reflection high energy electron diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy (STM). Clean, As-terminated (2*4) surfaces were prepared by molecular beam epitaxy and then exposed to Sb4 at 490 C, producing a (2*8)-reconstructed surface terminated with 1 ML of Sb. Re-heating such a surface to 460 C in vacuum returns the surface to a (2*4) reconstruction with approximately 0.5 ML Sb remaining. STM reveals a complex, but well-ordered structure on the (2*8) surface for which a tentative model is proposed. On the (2*4) surface, our results clearly show that each unit cell is terminated by three dimers, with two-thirds Sb dimers and one-third As dimers. These results contrast with previous proposals that the Sb-induced (2*4) surface is terminated solely by one or two Sb dimers. Pub. in Survace Science, v436, pL707-L714, 1999.