AlInN HEMT Grown on SiC by Metalorganic Vapor Phase Epitaxy for Millimeter-Wave Applications

In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (1%). The low Rsh of 215V/sq was obtained with an excellent s...

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Bibliographic Details
Main Authors: Guo, Shiping, Gao, Xiang, Gorka, Daniel, Chung, Jinwoork W, Wang, Han, Palacios, Tomas, Crespo, Antonio, Gillespie, James K, Chabak, Kelson, Trejo, Manuel
Format: Report
Language:English
Subjects:
2DEG(TWO-DIMENSIONAL ELECTRON GAS)
ALUMINUM INDIUM NITRATES
BARRIERS
CHARGE DENSITY
EPITAXIAL GROWTH
GATES(CIRCUITS)
HALL EFFECT
HETEROJUNCTION
HIGH MOBILITY ELECTRON TRANSISTOR
Inorganic Chemistry
MILLIMETER WAVES
MOBILITY
MOVPE(METALORGANIC VAPOR PHASE EPITAXY)
Organic Chemistry
ORGANOMETALLIC COMPOUNDS
Radiofrequency Wave Propagation
SILICON CARBIDES
TEST AND EVALUATION
TRANSCONDUCTANCE
VAPOR PHASES
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Summary:In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub-10 nm AlInN barrier were grown with very low Ga background level (1%). The low Rsh of 215V/sq was obtained with an excellent standard deviation of 1.1% across 300 wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm2/V s and sheet charge density of 1.76 1013/cm2. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1mm and 25 nm Al2O3 passivation show maximum drain current (IDS,max) of 2.36 A/mm at VGS 2 V. Gate recessed devices with 0.15mm gate length and 25 nm Al2O3 passivation resulted in maximum transconductance (gm) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum fT is 86 GHz and fmax is 91.7 GHz. See also ADM002356. Presented at the International Conference on Nitride Semiconductors (8th) (ICNS8) Held in Jeju, Korea on October 18-23, 2009. Sponsored by AOARD.