Reverse Gate Bias-Induced Degradation of AlGaN/GaN High Electron Mobility Transistors

A threshold reverse bias of 21 V was observed leading to a sharp increase in the gate current of AlGaN/GaN high electron mobility transistors biased at low source-drain voltage (5 V). The gate current increases by one to two orders of magnitude at this bias, corresponding to an electric field streng...

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Bibliographic Details
Main Authors: Chang, Chih-Yang, Anderson, Travis, Hite, Jennifer, Lu, Liu, Lo, Chien-Fong, Chu, Byung-Hwan, Cheney, D J, Douglas, E A, Gila, B P, Ren, F
Format: Report
Language:English
Subjects:
DEGRADATION
ELECTRIC FIELDS
Electrical and Electronic Equipment
ELECTROLUMINESCENCE
ELECTRON MICROSCOPY
FIELD INTENSITY
HIGH ELECTRON MOBILITY TRANSISTORS
PHOTOLUMINESCENCE
REPRINTS
SEMICONDUCTORS
THIN FILMS
THRESHOLD EFFECTS
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Summary:A threshold reverse bias of 21 V was observed leading to a sharp increase in the gate current of AlGaN/GaN high electron mobility transistors biased at low source-drain voltage (5 V). The gate current increases by one to two orders of magnitude at this bias, corresponding to an electric field strength around 1.8 MV cm 1. The gate current increased by roughly five orders of magnitude after step-stressing the gate bias from 10 to 42 V in 1 V increments for 1 min at each bias. The drain current was also decreased by 20% after this step-stress cycle. The photoluminescence and electroluminescence intensity from the semiconductor is decreased along the periphery of the gate region after stressing and transmission electron microscopy shows a thin native oxide layer under the gate and this disappears as the gate metal reacts with the underlying AlGaN. Published in Journal of Vacuum Science Technology B, v28 n5 p1044-1047, September/October 2010.