AlGaN/GaN High Electron Mobility Transistor Degradation Under On- and Off-State Stress

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both on- and off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron...

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Bibliographic Details
Main Authors: Douglas, E A, Chang, C Y, Cheney, D J, Gila, B P, Lo, C F, Lu, Liu, Holzworth, R, Whiting, P, Jones, K, Via, G D
Format: Report
Language:English
Subjects:
BIAS
DEGRADATION
DRAINAGE
ELECTRIC FIELDS
Electrical and Electronic Equipment
GATES(CIRCUITS)
HIGH ELECTRON MOBILITY TRANSISTORS
HIGH POWER
INDICATORS
LENGTH
LINEARITY
PATTERNS
REPRINTS
SCHOTTKY BARRIER DEVICES
SIMULATION
SOURCES
STABILITY
STRESS TESTING
STRESSES
TEST AND EVALUATION
TWO DIMENSIONAL
VOLTAGE
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Summary:AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both on- and off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions reveal that the Schottky contact is the source of degradation. Off-state stress showed a linear relationship between the critical degradation voltage and gate length, though two dimensional ATLAS/Blaze simulations show that the maximum electric field is similar for all gate lengths. Additionally, as the drain bias was increased, the critical voltage decreased. However, the cumulative bias between the gate and drain remained constant, further indicating that the electric field is the main mechanism for degradation. Published in Microelectronics Reliability v51 p207-211, 2011.