Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML) quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML...

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Bibliographic Details
Main Authors: Kim, J O, Sengupta, S, Barve, A V, Sharma, Y D, Adhikary, S, Lee, S J, Noh, S K, Allen, M S, Allen, J W, Chakrabari, S
Format: Report
Language:English
Subjects:
INFRARED DETECTORS
PHOTODETECTORS
POLARIZATION
QUANTUM DOTS
Quantum Theory and Relativity
QUANTUM WELLS
REPRINTS
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Summary:We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML) quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML stacks has the best performance. The s-to-p (s/p) polarized spectral response ratio of this device is measured to be 21.7%, which is significantly higher than conventional Stranski-Krastanov quantum dots (13%) and quantum wells (2.8%). This result makes the SML-QDIP an attractive candidate in applications that require normal incidence. Published in Applied Physics Letters, v102 p011131-1/011131-4, 2013.