Electrical Performance of Monolayer MoS2 Field-Effect Transistors Prepared by Chemical Vapor Deposition

Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electro...

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Bibliographic Details
Main Authors: Amani, Matin, Chin, Matthew L, Birdwell, A G, O'Regan, Terrance P, Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M, Lou, Jun, Dubey, Madan
Format: Report
Language:English
Subjects:
AFM(ATOMIC FORCE MICROSCOPY)
BAND GAPS
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DIELECTRICS
Electrical and Electronic Equipment
ELECTRICAL CONDUCTIVITY
Electricity and Magnetism
FIELD EFFECT TRANSISTORS
HIGH-K DIELECTRIC THIN FILMS
Industrial Chemistry and Chemical Processing
MOLYBDENUM COMPOUNDS
MONOLAYERS
MOS2(MOLYBDENUM DISULFIDES)
PE611103
PHOTOLUMINESCENCE
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
Solid State Physics
TEMPERATURE
THIN FILMS
VOLTAGE
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Summary:Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm(expn 2)/V s at 300 K without a high-k dielectric overcoat and increased to 16.1 cm(expn 2)/V s with a high-k dielectric overcoat. In addition the devices show on/off ratios ranging from 10(expn 5) to 10(expn 9). Prepared in cooperation with the Department of Electrical Engineering, Oregon State University, Corvallis and the Department of Mechanical Engineering and Materials Science, Rice University, Houston, TX. Published in Applied Physics Letters, v102 article ID 193107, 16 May 2013.