Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region

InAs(0.6)Sb(0.4)/Al(0.75)In(0.25)Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga(1-x) InxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 micormeter and T=150K, devices with 1-micrometer thick absorbers demonstrated an ext...

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Bibliographic Details
Main Authors: Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Lin, Youxi, Shterengas, Leon, Belenky, Gregory, Sarney, Wendy, Svensson, Stefan
Format: Report
Language:English
Subjects:
BARRIERS
BUFFERS
EPITAXIAL GROWTH
INFRARED RADIATION
LONG WAVELENGTHS
METAMORPHIC GEOLOGY
Optical Detection and Detectors
PE611102
PHOTODETECTORS
QUANTUM EFFICIENCY
REPRINTS
SUBSTRATES
VOLTAGE
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Summary:InAs(0.6)Sb(0.4)/Al(0.75)In(0.25)Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga(1-x) InxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 micormeter and T=150K, devices with 1-micrometer thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V. The original document contains color images. Published in Applied Physics Letters, v103 p051120-1/051120-3, 2013.