Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model w...

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Bibliographic Details
Main Authors: Pushpakaran, Bejoy N, Bayne, Stephen B, Ogunniyi, Aderinto A
Format: Report
Language:English
Subjects:
BREAKDOWN SIMULATION
BREAKDOWN(ELECTRONIC THRESHOLD)
Electrical and Electronic Equipment
FIELD EFFECT TRANSISTORS
METAL OXIDE SEMICONDUCTORS
PHYSICS BASED MODELS
SILICON CARBIDES
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Summary:This research illustrates the transient performance of N-channel silicon carbide (4H-SiC) power MOSFET rated for a blocking voltage of 1200V and drain current density of 100A/cm2. The simulation of vertical D-MOSFET half cell structure was performed at room temperature of 300K. The 2D device model was created and simulated using Silvaco ATLAS Technology Computer-Aided Design (TCAD) physics based simulation software. Physics based models were used to accurately model electrical device parameters including carrier mobility, recombination effects, bandgap narrowing, impact ionization and lattice heating. Prepared in collaboration with Army Research Lab, Adelphi MD. See also ADM002371. 2013 IEEE Pulsed Power Conference, Digest of Technical Papers 1976-2013, and Abstracts of the 2013 IEEE International Conference on Plasma Science. IEEE International Pulsed Power Conference (19th). Held in San Francisco, CA on 16-21 June 2013., The original document contains color images.