Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures

A novel technique is used to determine the minority carrier lifetimes, interface recombination velocity, and radiative recombination constant from time-resolved photoluminescence measurements on a set of 3 molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs)...

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Bibliographic Details
Main Authors: Folkes, Patrick A, Connelly, Blair, Hier, Harry, Beck, William, Van Mil, Brenda
Format: Report
Language:English
Subjects:
ALUMINUM GALLIUM ARSENIDES
BRAGG ANGLE
CHARGE CARRIERS
DHS(DOUBLE HETEROSTRUCTURES)
DISTRIBUTION
Electrooptical and Optoelectronic Devices
EXPERIMENTAL DESIGN
GROWTH(GENERAL)
HETEROGENEITY
HIGH-EFFICIENCY SEMICONDUCTOR SOLAR CELLS
LIFE CYCLES
MOLECULAR BEAM EPITAXY
NON-RADIATIVE LIFETIME
Optics
OPTOELECTRONICS
PHOTOLUMINESCENCE
PHOTONS
Physical Chemistry
RADIATION
RECOMBINATION REACTIONS
REFLECTORS
SEMICONDUCTORS
SOLAR CELLS
Solid State Physics
SUBSTRATES
VELOCITY
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Summary:A novel technique is used to determine the minority carrier lifetimes, interface recombination velocity, and radiative recombination constant from time-resolved photoluminescence measurements on a set of 3 molecular beam epitaxy (MBE)-grown gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs) double heterostructures (DHs) and published theory. This technique is used to determine that a distributed Bragg reflector between the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth parameters. The original document contains color images.