Structural and Optical Characteristics of Metamorphic Bulk InAsSb

Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% and layer thicknesses up to 3 micro m were grown by molecular beam epitaxy. The photoluminescence (PL) peak energy as low as 0.10 eV was demonstrated at T = 77 K. The electroluminescence and quantum efficiency data demonstrated with unoptim...

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Bibliographic Details
Main Authors: Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Kipshidze, Gela, Shterengas, Leon, Belenky, Gregory, Sarney, Wendy L, Svensson, Stefan P
Format: Report
Language:English
Subjects:
ANTIMONIDES
BARRIER DETECTORS
Crystallography
HOLES(ELECTRON DEFICIENCIES)
INASSB(INDIUM ARSENIC ANTIMONIDES)
INDIUM ARSENIDES
INFRARED DETECTORS
Inorganic Chemistry
LAYERS
LONG WAVELENGTHS
LONG-WAVE INFRARED
METAMORPHIC GROWTH
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
Optics
PE611102
STRUCTURAL PROPERTIES
THICKNESS
UNRELAXED INASSB BULK
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Summary:Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% and layer thicknesses up to 3 micro m were grown by molecular beam epitaxy. The photoluminescence (PL) peak energy as low as 0.10 eV was demonstrated at T = 77 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures from T = 80 to 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness. The original document contains color images. Prepared in collaboration with the Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, NY. Published in the International Journal of High Speed Electronics and Systems, v23 n3-4 article ID 1450021, 2014.