Defect Related Dark Currents in III-V MWIR nBn Detectors

The effect of defects on the dark current characteristics of MWIR, III-V nBn detectors has been studied. Two different types of defects are compared, those produced by lattice mismatch and by proton irradiation. It is shown that the introduction of defects always elevates dark currents; however the...

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Bibliographic Details
Main Authors: Savich, G R, Sidor, D E, Du, X, Jain, M, Morath, C P, Cowan, V M, Kim, J K, Klem, J F, Leonhardt, D, Hawkins, S D
Format: Report
Language:English
Subjects:
COOLING
CURRENTS
DARKNESS
DEFECTS(MATERIALS)
DETECTORS
Electrical and Electronic Equipment
GROUP III COMPOUNDS
GROUP V COMPOUNDS
IRRADIATION
Miscellaneous Detection and Detectors
N TYPE SEMICONDUCTORS
P TYPE SEMICONDUCTORS
PE611102A
PHOTODIODES
PROTONS
SEMICONDUCTOR JUNCTIONS
TOLERANCE
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Summary:The effect of defects on the dark current characteristics of MWIR, III-V nBn detectors has been studied. Two different types of defects are compared, those produced by lattice mismatch and by proton irradiation. It is shown that the introduction of defects always elevates dark currents; however the effect on dark current is different for nBn detectors and conventional photodiodes. The dark currents of nBn detectors are found to be more tolerant of defects compared to pn-junction based devices. Defects more weakly increase dark currents, and cooling reduces the defectproduced dark currents more rapidly in nBn detectors than in conventional photodiodes. The original document contains color images. Presented at SPIE Defense and Security Conference on 6 May 2014. Published in Proceedings of Conference, v9070 907011-1 - 907011-6.