Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices

The energy gaps were studied in two types of structures: unrelaxed bulk In- As1-xSbx layers with x = 0.2 to 0.46 grown on metamorphic buffers and type II InAs1-xSbx/InAs strained-layer superlattices (SLS) with x = 0.225 to 0.296 in the temperature range from T = 13 K to 300 K. All structures were gr...

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Bibliographic Details
Main Authors: Lin, Youxi, Wang, Ding, Donetsky, Dmitry, Shterengas, Leon, Kipshidze, Gela, Belenky, Gregory, Svensson, Stefan P, Sarney, Wendy L, Hier, Harry S
Format: Report
Language:English
Subjects:
ABSORPTION
ALUMINUM COMPOUNDS
BROADENING
BUFFERS(CHEMISTRY)
CONDUCTIVITY
Electrooptical and Optoelectronic Devices
ELECTROOPTICS
ENERGY GAPS
ENERGY-BAND OFFSETS BOWING
EXCITATION
FWHM( FULL-WIDTH AT HALF-MAXIMUM)
HETEROGENEITY
HOLES(OPENINGS)
INDIUM ARSENIDES
LIGHT EMITTING DIODES
METAMORPHIC GEOLOGY
MOLECULAR BEAM EPITAXY
Optics
OPTOELECTRONICS
PE611102A
PEAK VALUES
PHOTOLUMINESCENCE
Physical Chemistry
SEMICONDUCTORS
SLS(STRAINED-LAYER SUPERLATTICES)
Solid State Physics
SUBSTRATES
SUPERLATTICES
THICKNESS
VALENCE BANDS
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Summary:The energy gaps were studied in two types of structures: unrelaxed bulk In- As1-xSbx layers with x = 0.2 to 0.46 grown on metamorphic buffers and type II InAs1-xSbx/InAs strained-layer superlattices (SLS) with x = 0.225 to 0.296 in the temperature range from T = 13 K to 300 K. All structures were grown on GaSb substrates. The longest wavelength of photoluminescence (PL) at low temperatures was observed from bulk InAs0.56Sb0.44 with a peak at 10.3 um and full-width at half-maximum (FWHM) of 11 meV. The PL data for the bulk InAs1-xSbx materials of various compositions imply an energy gap bowing parameter of 0.87 eV. A low-temperature PL peak at 9.1 um with FWHM of 13 meV was observed for InAs0.704Sb0.296/InAs SLS. The PL spectrum of InAs0.775Sb0.225/InAs SLS under pulsed excitation revealed a second peak associated with recombination of electrons in the three-dimensional (3D) continuum with holes in the InAs0.775Sb0.225. This experiment determined the conduction-band offset in the InAs0.775Sb0.225/InAs SLS. The energies of the conduction and valence bands in unstrained InAs1-xSbx and their bowing with respect to the Sb composition are discussed. Published in the Journal of Electronic Materials, v42 n5 p918-926, 8 March 2013.